Meco DPL
For next-generation silicon solar cells where the SiNx layer has been opened by laser ablation, the Meco Direct Plating Line (DPL) offers a cutting-edge solution to plate dense layers of Ni-Ag, Ni-Cu-Ag, or Ni-Cu-Sn directly onto high-ohmic emitters.
This innovative process boosts cell efficiency by up to 1% (absolute) and significantly reduces costs by eliminating the need for silver paste in frontside metallization.
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100% Ag paste saving
3,000 UPH Output
50 - 100 MW Capacity
5 x 5 / 6 x 6" Cell size
Key features
Explore all features of the Meco DPL
Meco’s Solution for High Speed Spot Plating with Exceptional Flexibility
- Vertical product handling for optimized process flow
- Low drag-out of plating chemicals, reducing waste and cost
- Compact machine design for easy maintenance and integration
- Inline plating process ensuring high uptime and productivity
- Efficiency improvement: up to 1% (absolute) increase with direct metallization
- Bill of Materials (BoM) savings: up to 0.05 US$/Wp reduction by eliminating silver paste
- Proven machine concept: over 350 installations in the semiconductor industry
- Process start-up support provided by Meco experts
Specifications
The Meco DPL in numbers
Specifications
| Cell size | 5 x 5″, 6 x 6″ |
| Metal options | Ni-Ag, Ni-Cu-Ag, Ni-Cu-Sn |
| Seed layer | Silicon emitter (< 120 Ohm/square) |
| Process speed | 1,500 – 3,000 UPH (pilot line: 100 – 500 UPH) |
| Production capacity | 50 – 100 MW |
| Cell efficiency gain | up to 1% (absolute) |
| Savings in Ag paste | 100 % |
