Meco RTR Solar
Meco provides advanced Reel-to-Reel (R2R) plating equipment designed to electroplate the absorber (precursor) layers of flexible CIS and CIGS thin film solar cells. Using continuous selective plating technology, these custom-made systems enable the precise deposition of sub-micron layers of indium on copper, or simultaneous plating of gallium, copper, and indium, onto flexible substrates with exceptional uniformity. Achieving high efficiency and selectivity in the plating process is central to the system’s performance.
Traditional methods for depositing metal layers on thin film solar cells rely on vacuum deposition, which requires extensive vacuum infrastructure and occupies significant factory space. In contrast, the Meco R2R Solar Line operates without vacuum conditions, resulting in a more compact footprint and lower facility requirements.
The system is designed to plate precursor layers onto seed layers of flexible substrates such as steel, PET, or Kapton. Since there is no standard substrate size in the thin film solar industry, each plating line is tailored to meet the specific dimensions and needs of individual customers, ensuring an optimized solution for every production environment.
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25 - 1,000 mm Substrate width
<5 % Plating unifiormity
15 - 20 MW Capacity
23 - 150 µm Substrate thickness
Key features
Explore all features of the Meco DPL
Meco’s Solution for High Speed Spot Plating with Exceptional Flexibility
- Vertical product handling for optimized process flow
- Low drag-out of plating chemicals, reducing waste and cost
- Compact machine design for easy maintenance and integration
- Inline plating process ensuring high uptime and productivity
- Efficiency improvement: up to 1% (absolute) increase with direct metallization
- Bill of Materials (BoM) savings: up to 0.05 US$/Wp reduction by eliminating silver paste
- Proven machine concept: over 350 installations in the semiconductor industry
- Process start-up support provided by Meco experts
Specifications
The Meco DPL in numbers
Specifications
| Cell size | 5 x 5″, 6 x 6″ |
| Metal options | Ni-Ag, Ni-Cu-Ag, Ni-Cu-Sn |
| Seed layer | Silicon emitter (< 120 Ohm/square) |
| Process speed | 1,500 – 3,000 UPH (pilot line: 100 – 500 UPH) |
| Production capacity | 50 – 100 MW |
| Cell efficiency gain | up to 1% (absolute) |
| Savings in Ag paste | 100 % |